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Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties.

ABSTRACT: Copper sulfide is a promising p-type inorganic semiconductor for optoelectronic devices such as solar cells, due its small band gap energy and its electrical properties. In this work nanocrystalline copper sulfide (Cu x S), with two stoichiometric ratios (x = 2, 1.8) was obtained by one-pot synthesis at 220, 230, 240 and 260 °C in an organic solvent and amorphous Cu x S was obtained in aqueous solution. Nanoparticle-like nucleation centers are formed at lower temperatures (220 °C), mixtures of morphologies (nanorods, nanodisks and nanoprisms) are seen at 230 and 240 °C, in which the nanodisks are predominant, while big hexagonal/prismatic crystals are obtained at 260 °C according to TEM results. A mixture of chalcocite and digenite phases was found at 230 and 240 °C, while a clear transition to a pure digenite phase was seen at 260 °C. The evolution of morphology and transition of phases is consistent to the electrical, optical, and morphological properties of the copper sulfide. In fact, digenite Cu1.8S is less resistive (346 Ω/sq) and has a lower energy band gap (1.6 eV) than chalcocite Cu2S (5.72 × 10(5) Ω/sq, 1.87 eV). Low resistivity was also obtained in Cu x S synthesized in aqueous solution, despite its amorphous structure. All Cu x S products could be promising for optoelectronic applications.

SUBMITTER: Quintana-Ramirez PV

PROVIDER: S-EPMC4168957 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties.

Quintana-Ramirez Priscilla Vasthi PV Arenas-Arrocena Ma Concepción MC Santos-Cruz José J Vega-González Marina M Martínez-Alvarez Omar O Castaño-Meneses Víctor Manuel VM Acosta-Torres Laura Susana LS de la Fuente-Hernández Javier J

Beilstein journal of nanotechnology 20140915

Copper sulfide is a promising p-type inorganic semiconductor for optoelectronic devices such as solar cells, due its small band gap energy and its electrical properties. In this work nanocrystalline copper sulfide (Cu x S), with two stoichiometric ratios (x = 2, 1.8) was obtained by one-pot synthesis at 220, 230, 240 and 260 °C in an organic solvent and amorphous Cu x S was obtained in aqueous solution. Nanoparticle-like nucleation centers are formed at lower temperatures (220 °C), mixtures of m ...[more]

PMID: 25247136

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Project description:Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σd) and electron-transport capacity. In this work, we investigated the optical and electrical properties of different n-type monolayers and stacked gradient multilayers, including monolayer, bilayer, and trilayer Si-based thin films, acting as electron-transport layers (ETL) prepared by plasma-enhanced chemical vapor deposition, and studied the influences of these above layers on the performance of SHJ solar cells. The experimental results demonstrate that the ETL with an n-nc-Si:H/n-nc-SiOx:H/n+-nc-Si:H trilayer structure exhibits the potential to boost highly efficient solar cells. The bottom highly crystallized, lightly phosphorus-doped n-nc-Si:H film promotes rapid nucleation of the intermediate n-nc-SiOx:H film and thus reduces the thickness of the incubation layer, as well as improves the passivation contact. The n-nc-SiOx:H film in the middle layer provides excellent optical properties and reduces parasitic absorption, thereby increasing the short-circuit current density. Furthermore, the highly doped n+-nc-Si:H at the top offers an optimal ohmic contact with the reactive plasma deposition-grown TCO layer, which ultimately enhances the fill factor. Ultimately, a conversion efficiency of 20.41%, with an open-circuit voltage of 720 mV, a short-circuit current density of 39.34 mA/cm2, and a filling factor of 72.05%, was achieved in the SHJ solar cell using a typical trilayer structure. This kind of trilayer structure has a particular significance for potential industrialized applications as it allows for efficient utilization of solar energy.

Dataset Information

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties.

Publications

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties.

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