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Frequency selectivity in pulse responses of Pt/poly(3-hexylthiophene-2,5-diyl)/polyethylene oxide +Li+/Pt hetero-junction.


ABSTRACT: Pt/poly(3-hexylthiophene-2,5-diyl)/polyethylene oxide + Li+/Pt hetero junctions were fabricated, and their pulse responses were studied. The direct current characteristics were not symmetric in the sweeping range of ±2 V. Negative differential resistance appeared in the input range of 0 to 2 V because of de-doping (or reduction) in the side with the semiconductor layer. The device responded stably to a train of pulses with a fixed frequency. The inverse current after a pulse was related to the back-migrated ions. Importantly, the weight calculated based on the inverse current strength, was depressed during low-frequency stimulations but was potentiated during high-frequency stimulations when pulses were positive. Therefore, frequency selectivity was first observed in a semiconducting polymer/electrolyte hetero junction. Detailed analysis of the pulse response showed that the input frequency could modulate the timing of ion doping, de-doping, and re-doping at the semiconducting polymer/electrolyte interface, which then resulted in the frequency selectivity. Our study suggests that the simple redox process in semiconducting polymers can be modulated and used in signal handling or the simulation of bio-learning.

SUBMITTER: Zeng F 

PROVIDER: S-EPMC4171527 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Frequency selectivity in pulse responses of Pt/poly(3-hexylthiophene-2,5-diyl)/polyethylene oxide +Li+/Pt hetero-junction.

Zeng Fei F   Lu Siheng S   Li Sizhao S   Li Xiaojun X   Pan Feng F  

PloS one 20140922 9


Pt/poly(3-hexylthiophene-2,5-diyl)/polyethylene oxide + Li+/Pt hetero junctions were fabricated, and their pulse responses were studied. The direct current characteristics were not symmetric in the sweeping range of ±2 V. Negative differential resistance appeared in the input range of 0 to 2 V because of de-doping (or reduction) in the side with the semiconductor layer. The device responded stably to a train of pulses with a fixed frequency. The inverse current after a pulse was related to the b  ...[more]

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