19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO₂ Contact.

ABSTRACT: We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO₂ deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO₂ film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm² and a high power conversion efficiency of 19.2%.

SUBMITTER: Yin X 

PROVIDER: S-EPMC4311942 | biostudies-literature |

REPOSITORIES: biostudies-literature