Browse
Submit Data
Databases
API
Help

Dataset Information

20 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide.

ABSTRACT: The extraordinary electronic structures of monolayer transition metal dichalcogenides, such as the spin-valley-coupled band edges, have sparked great interest for potential spintronic and valleytronic applications based on these two-dimensional materials. In this work, we report the experimental observation of quasi-particle interference patterns in monolayer WSe2 using low-temperature scanning tunnelling spectroscopy. We observe intervalley quantum interference involving the Q valleys in the conduction band due to spin-conserving scattering processes, while spin-flipping intervalley scattering is absent. Our results establish unequivocally the presence of spin-valley coupling and affirm the large spin splitting at the Q valleys. Importantly, the inefficient spin-flipping scattering implies long valley and spin lifetime in monolayer WSe2, which is a key figure of merit for valley-spintronic applications.

SUBMITTER: Liu H

PROVIDER: S-EPMC4569794 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.

Project description:In this paper, we investigate the synthesis of WSe2 by chemical vapor deposition and study the current transport and device scaling of monolayer WSe2. We found that the device characteristics of the back-gated WSe2 transistors with thick oxides are very sensitive to the applied drain bias, especially for transistors in the sub-micrometer regime. The threshold voltage, subthreshold swing, and extracted field-effect mobility vary with the applied drain bias. The output characteristics in the long-channel transistors show ohmic-like behavior, while that in the short-channel transistors show Schottky-like behavior. Our investigation reveals that these phenomena are caused by the drain-induced barrier lowering (short-channel effect). For back-gated WSe2 transistors with 280?nm oxide, the short-channel effect appears when the channel length is shorter than 0.4?µm. This extremely long electrostatic scaling length is due to the thick back-gate oxides. In addition, we also found that the hydrogen flow rate and the amount of WO3 precursor play an important role in the morphology of the WSe2. The hole mobility of the monolayer WSe2 is limited by Columbic scattering below 250?K, while it is limited by phonon scattering above 250?K. These findings are very important for the synthesis of WSe2 and accurate characterization of the electronic devices based on 2D materials.

| S-EPMC5869716 | biostudies-literature

Insulator-quantum Hall transitionin monolayer epitaxial graphene.

Project description:We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρxx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σxx and σxy, in the most disordered device, we observed T-driven flow diagram approximated by the semi-circle law as well as the T-independent point in σxy near e2/h. We discuss our experimental results in the context of the evolution of the zero-energy Landau level at low magnetic fields B. We also compare the observed strongly insulating behaviour with metallic behaviour and the absence of the I-QH transition in graphene on SiO2 prepared by mechanical exfoliation.

| S-EPMC5134328 | biostudies-literature

Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications.

Project description:Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interference act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage, and the laser parameters. By optimizing the growth and interference conditions, regular dense ordering of single dots was obtained for the first time using this in situ noninvasive approach. The photoluminescence spectra of the resulting quantum dot arrays with a period of 300 nm show good optical quality and uniformity. This technique paves the way for the rapid large-scale fabrication of arrays of single dots to enable quantum information technology device platforms.

| S-EPMC7304857 | biostudies-literature

Large-Area Epitaxial Monolayer MoS2.

Project description:Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. This is also confirmed by the relatively large and length-independent mobility in devices with a channel length reaching 80 ?m.

| S-EPMC4415455 | biostudies-literature

Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.

Project description:Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of ∼20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.

| S-EPMC4859068 | biostudies-literature

Observation and manipulation of quantum interference in a superconducting Kerr parametric oscillator.

Project description:Quantum tunneling is the phenomenon that makes superconducting circuits "quantum". Recently, there has been a renewed interest in using quantum tunneling in phase space of a Kerr parametric oscillator as a resource for quantum information processing. Here, we report a direct observation of quantum interference induced by such tunneling and its dynamics in a planar superconducting circuit through Wigner tomography. We experimentally elucidate all essential properties of this quantum interference, such as mapping from Fock states to cat states, a temporal oscillation due to the pump detuning, as well as its characteristic Rabi oscillations and Ramsey fringes. Finally, we perform gate operations as manipulations of the observed quantum interference. Our findings lay the groundwork for further studies on quantum properties of superconducting Kerr parametric oscillators and their use in quantum information technologies.

| S-EPMC10762009 | biostudies-literature

Photoinduced edge-specific nanoparticle decoration of two-dimensional tungsten diselenide nanoribbons.

Project description:Metallic nanoparticles are widely explored for boosting light-matter coupling, optoelectronic response, and improving photocatalytic performance of two-dimensional (2D) materials. However, the target area is restricted to either top or bottom of the 2D flakes. Here, we introduce an approach for edge-specific nanoparticle decoration via light-assisted reduction of silver ions and merging of silver seeds. We observe arrays of the self-limited in size silver nanoparticles along tungsten diselenide WSe2 nanoribbon edges. The density of nanoparticles is tunable by adjusting the laser fluence. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to investigate the size, distribution, and photo-response of the deposited plasmonic nanoparticles on the quasi-one-dimensional nanoribbons. We report an on-surface synthesis path for creating mixed-dimensional heterostructures and heterojunctions with potential applications in opto-electronics, plasmonics, and catalysis, offering improved light matter coupling, optoelectronics response, and photocatalytic performance of 2D materials.

| S-EPMC10425467 | biostudies-literature

Evidence of weak localization in quantum interference effects observed in epitaxial La0.7Sr0.3MnO3 ultrathin films.

Project description:Quantum interference effects (QIEs) dominate the appearance of low-temperature resistivity minimum in colossal magnetoresistance manganites. The T(1/2) dependent resistivity under high magnetic field has been evidenced as electron-electron (e-e) interaction. However, the evidence of the other source of QIEs, weak localization (WL), still remains insufficient in manganites. Here we report on the direct experimental evidence of WL in QIEs observed in the single-crystal La0.7Sr0.3MnO3 (LSMO) ultrathin films deposited by laser molecular beam epitaxy. The sharp cusps around zero magnetic field in magnetoresistance measurements is unambiguously observed, which corresponds to the WL effect. This convincingly leads to the solid conclusion that the resistivity minima at low temperatures in single-crystal manganites are attributed to both the e-e interaction and the WL effect. Moreover, the temperature-dependent phase-coherence length corroborates the WL effect of LSMO ultrathin films is within a two-dimensional localization theory.

| S-EPMC4867642 | biostudies-other

Direct band-gap crossover in epitaxial monolayer boron nitride.

Project description:Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not confirmed experimentally. Here, in contrast to the technique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates. We combine deep-ultraviolet photoluminescence and reflectance spectroscopy with atomic force microscopy to reveal the presence of a direct gap of energy 6.1 eV in the single atomic layers, thus confirming a crossover to direct gap in the monolayer limit.

| S-EPMC6572751 | biostudies-literature

Synergistic Effect of 3D/2D Vanadium Diselenide/Tungsten Diselenide Hybrid Materials: Electrochemical Detection of 5-Nitroquinoline a Hazard to the Aquatic Environment.

Project description:The development of multidimensional structured electrode materials with simple synthetic methods and their electrochemical sensing ability against environmental pollution is still a challenge. In this article, we propose a hybrid formed using multidimensional (3D/2D) vanadium diselenide microspheres and tungsten diselenide nanosheets (VSe2/WSe2) for the electrochemical detection of 5-nitroquinoline (5-NQ), a highly toxic and hazardous substance that is polluting aquatic life due to increasing industrial activities. The 3D/2D VSe2/WSe2 hybrids were prepared by a simple solvothermal method and their morphological and structural analysis was confirmed by various spectroscopy and analytical techniques such as powder X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy-energy dispersive X-ray spectroscopy, transmission electron microscopy, cyclic voltammetry, and differential pulse voltammetry. The proposed 3D/2D architecture showed a strong synergistic effect between the two components as well as high electrical conductivity. As a result, an increased peak current for the reduction and detection of 5-NQ was achieved compared to other modified and unmodified disposable screen-printed electrodes (SPE), such as bare SPE, VSe2/SPE, and WSe2/SPE. Under the optimized electrochemical conditions, VSe2/WSe2/SPE showed large linear response ranges (0.012-1053, 1183-3474 μM), a low detection limit (0.002 μM), good sensitivity along with good selectivity, and repeatability for the detection of 5-NQ. With this prominent electrochemical behavior, the VSe2/WSe2 electrode has clear potential to produce high-performance sensor devices.

| S-EPMC11231969 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data