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Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.


ABSTRACT: Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ?2,000% at 400?K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9?T at 300?K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

SUBMITTER: Gopinadhan K 

PROVIDER: S-EPMC4595716 | biostudies-literature | 2015 Sep

REPOSITORIES: biostudies-literature

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Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

Gopinadhan Kalon K   Shin Young Jun YJ   Jalil Rashid R   Venkatesan Thirumalai T   Geim Andre K AK   Neto Antonio H Castro AHC   Yang Hyunsoo H  

Nature communications 20150921


Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic fiel  ...[more]

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