Ontology highlight
ABSTRACT:
SUBMITTER: Guo J
PROVIDER: S-EPMC4642297 | biostudies-literature | 2015 Nov
REPOSITORIES: biostudies-literature
Scientific reports 20151112
A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by ...[more]