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Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.

ABSTRACT: A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1?nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication.

SUBMITTER: Guo J

PROVIDER: S-EPMC4642297 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature

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Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.

Guo Jian J Yu Bingjun B Chen Lei L Qian Linmao L

Scientific reports 20151112

A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by ...[more]

PMID: 26559014

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Project description:Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring electrolyte transport to and from the interface through the electrode. Nanoporous gold electrodes with two types of nanostructures, fine and coarse (average ligament widths of ~30 and 100 nm, respectively) have been elaborated and tested. Patterns consisting in networks of square-based pyramids (10 × 10 μm2 base × 7 μm height) and U-shaped lines (2, 5, and 10 μm width × 10 μm height × 4 μm interspacing) are imprinted by both electrochemical and chemical (HF-H2O2) contact etching. A complete pattern transfer of pyramids is achieved with coarse nanoporous gold in both contact etching modes, at a rate of ~0.35 μm min-1. Under the same etching conditions, U-shaped line were only partially imprinted. The surface state after imprinting presents various defects such as craters, pores or porous silicon. Small walls are sometimes obtained due to imprinting of the details of the coarse gold nanostructure. We establish that np-Au electrodes can be turned into "np-Pt" electrodes by simply sputtering a thin platinum layer (5 nm) on the etching (catalytic) side of the electrode. Imprinting with np Au/Pt slightly improves the pattern transfer resolution. 2D numerical simulations of the valence band modulation at the Au/Si/electrolyte interfaces are carried out to explain the localized aspect of contact etching of n-type silicon with gold and platinum and the different surface state obtained after patterning. They show that n-type silicon in contact with gold or platinum is in inversion regime, with holes under the metal (within 3 nm). Etching under moderate anodic polarization corresponds to a quasi 2D hole transfer over a few nanometers in the inversion layer between adjacent metal and electrolyte contacts and is therefore very localized around metal contacts.

Dataset Information

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.

Publications

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching.

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