Browse
Submit Data
Databases
API
Help

Dataset Information

29 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films.

ABSTRACT: Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6?±?1.2)·10(-2) and (10.4?±?2.6)·10(-2), respectively.

SUBMITTER: Manzano CV

PROVIDER: S-EPMC4726026 | biostudies-literature | 2016 Jan

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films.

Manzano Cristina V CV Abad Begoña B Muñoz Rojo Miguel M Koh Yee Rui YR Hodson Stephen L SL Lopez Martinez Antonio M AM Xu Xianfan X Shakouri Ali A Sands Timothy D TD Borca-Tasciuc Theodorian T Martin-Gonzalez Marisol M

Scientific reports 20160118

Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10(-2) and (10.4 ± 2.6)· ...[more]

PMID: 26776726

Similar Datasets

Thermoelectric Properties of Bismuth Telluride Thin Films Electrodeposited from a Nonaqueous Solution.

Project description:We report the thermoelectric properties of Bi2Te3 thin films electrodeposited from the weakly coordinating solvent dichloromethane (CH2Cl2). It was found that the oxidation of porous films is significant, causing the degradation of its thermoelectric properties. We show that the morphology of the film can be improved drastically by applying a short initial nucleation pulse, which generates a large number of nuclei, and then growing the nuclei by pulsed electrodeposition at a much lower overpotential. This significantly reduces the oxidation of the films as smooth films have a smaller surface-to-volume ratio and are less prone to oxidation. X-ray photoelectron spectroscopy (XPS) shows that those films with Te(O) termination show a complete absence of oxygen below the surface layer. A thin film transfer process was developed using polystyrene as a carrier polymer to transfer the films from the conductive TiN to an insulating layer for thermoelectrical characterization. Temperature-dependent Seebeck measurements revealed a room-temperature coefficient of -51.7 ?V/K growing to nearly -100 ?V/K at 520 °C. The corresponding power factor reaches a value of 88.2 ?W/mK2 at that temperature.

| S-EPMC7315573 | biostudies-literature

Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films.

Project description:While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain unknown. Here, we report the thermal conductivities of Ag3.9Sb33.6Te62.5 and AgSbTe2 thin films with controlled annealing and temperature conditions and demonstrate the impact of silver content on thermal transport. After annealing at 160 °C, the room-temperature thermal conductivity of Ag3.9Sb33.6Te62.5 and AgSbTe2 thin films increases from 0.24 to 1.59 Wm-1 K-1 and from 0.17 to 0.56 Wm-1 K-1, respectively. Using phonon transport models and X-ray diffraction measurements, we attribute the thermal conductivity increases to the crystal growth and explain the thermal conductivity variations with the degree of crystallization. Unlike electrical properties reported in previous studies, the presence of silver contents has little impact on the thermal conductivity of Ag3.9Sb33.6Te62.5 and leads to a strong reduction in the thermal conductivity of AgSbTe2 thin films. By performing transient thermal conductivity measurements at 94 °C, we find the crystallization activation energy of Ag3.9Sb33.6Te62.5 and AgSbTe2 films as 1.14 eV and 1.16 eV, respectively. Their differences reveal the role of silver in inhibiting the nucleation and growth of Sb2Te3 crystals and impeding thermal transport. These findings provide guidance for optimizing doping and annealing conditions of antimony tellurides for near-room-temperature thermoelectric applications.

| S-EPMC6592942 | biostudies-literature

Strain Effects on the Electronic and Thermoelectric Properties of n(PbTe)-m(Bi2Te3) System Compounds.

Project description:Owing to their low lattice thermal conductivity, many compounds of the n(PbTe)-m(Bi2Te3) homologous series have been reported in the literature with thermoelectric (TE) properties that still need improvement. For this purpose, in this work, we have implemented the band engineering approach by applying biaxial tensile and compressive strains using the density functional theory (DFT) on various compounds of this series, namely Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5. All the fully relaxed Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5 compounds are narrow band-gap semiconductors. When applying strains, a semiconductor-to-metal transition occurs for all the compounds. Within the range of open-gap, the electrical conductivity decreases as the compressive strain increases. We also found that compressive strains cause larger Seebeck coefficients than tensile ones, with the maximum Seebeck coefficient being located at -2%, -6%, -3% and 0% strain for p-type Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5, respectively. The use of the quantum theory of atoms in molecules (QTAIM) as a complementary tool has shown that the van der Waals interactions located between the structure slabs evolve with strains as well as the topological properties of Bi2Te3 and PbBi2Te4. This study shows that the TE performance of the n(PbTe)-m(Bi2Te3) compounds is modified under strains.

| S-EPMC8348818 | biostudies-literature

Effects of Preparation Methods on the Thermoelectric Performance of SWCNT/Bi2Te3 Bulk Composites.

Project description:Single-walled carbon nanotube (SWCNT)/Bi2Te3 composite powders were fabricated via a one-step in situ reductive method, and their corresponding bulk composites were prepared by a cold-pressing combing pressureless sintering process or a hot-pressing process. The influences of the preparation methods on the thermoelectric properties of the SWCNT/Bi2Te3 bulk composites were investigated. All the bulk composites showed negative Seebeck coefficients, indicating n-type conduction. A maximum power factor of 891.6 μWm-1K-2 at 340 K was achieved for the SWCNT/Bi2Te3 bulk composites with 0.5 wt % SWCNTs prepared by a hot-pressing process, which was ~5 times higher than that of the bulk composites (167.7 μWm-1K-2 at 300 K) prepared by a cold-pressing combing pressureless sintering process, and ~23 times higher than that of the bulk composites (38.6 μWm-1K-2 at 300 K) prepared by a cold-pressing process, mainly due to the enhanced density of the hot-pressed bulk composites.

| S-EPMC7321600 | biostudies-literature

The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3-x Se x.

Project description:Alloying bismuth telluride with antimony telluride and bismuth selenide for p- and n-type materials, respectively, improves the thermoelectric quality factor for use in room temperature modules. As the electronic and thermal transports can vary substantially, the alloy composition is a key engineering parameter. The n-type Bi2Te3- x Se x alloy lags its p-type counterpart in thermoelectric performance and does not lend itself as readily to simple transport modeling which complicates engineering. Combining literature data with recent results across the entire alloy composition range, the complex electronic structure dynamics and trends in lattice thermal conductivity are explored. Spin-orbit interaction plays a critical role in determining the position and degeneracy of the various conduction band minima. This behavior is incorporated into a two-band effective mass model to estimate the transport parameters in each band. An alloy scattering model is utilized to demonstrate how phonon scattering behaves differently on either side of the intermediate ordered compound Bi2Te2Se due to chalcogen site occupancy preference. The parametrization of the electronic and thermal transports presented can be used in future optimization efforts.

| S-EPMC7150672 | biostudies-literature

The Effect of Reactive Electric Field-Assisted Sintering of MoS2/Bi2Te3 Heterostructure on the Phase Integrity of Bi2Te3 Matrix and the Thermoelectric Properties.

Project description:In this work, a series of Bi2Te3/X mol% MoS2 (X = 0, 25, 50, 75) bulk nanocomposites were prepared by hydrothermal reaction followed by reactive spark plasma sintering (SPS). X-ray diffraction analysis (XRD) indicates that the native nanopowders, comprising of Bi2Te3/MoS2 heterostructure, are highly reactive during the electric field-assisted sintering by SPS. The nano-sized MoS2 particles react with the Bi2Te3 plates matrix forming a mixed-anion compound, Bi2Te2S, at the interface between the nanoplates. The transport properties characterizations revealed a significant influence of the nanocomposite structure formation on the native electrical conductivity, Seebeck coefficient, and thermal conductivity of the initial Bi2Te3 matrix. As a result, enhanced ZT values have been obtained in Bi2Te3/25 mol% MoS2 over the temperature range of 300-475 K induced mainly by a significant increase in the electrical conductivity.

| S-EPMC8746225 | biostudies-literature

Ultralight, Ultraflexible, Anisotropic, Highly Thermally Conductive Graphene Aerogel Films.

Project description:Graphene aerogels have attracted much attention as a promising material for various applications. The unusually high intrinsic thermal conductivity of individual graphene sheets makes an obvious contrast with the thermal insulating performance of assembled 3D graphene materials. We report the preparation of anisotropy 3D graphene aerogel films (GAFs) made from tightly packed graphene films using a thermal expansion method. GAFs with different thicknesses and an ultimate low density of 4.19 mg cm-3 were obtained. GAFs show high anisotropy on average cross-plane thermal conductivity (K⊥) and average in-plane thermal conductivity (K||). Additionally, uniaxially compressed GAFs performed a large elongation of 11.76% due to the Z-shape folding of graphene layers. Our results reveal the ultralight, ultraflexible, highly thermally conductive, anisotropy GAFs, as well as the fundamental evolution of macroscopic assembled graphene materials at elevated temperature.

| S-EPMC8623857 | biostudies-literature

Mechanical Properties of Solder-Jointed Copper Rods with Electrodeposited Sn-Zn Alloy Films.

Project description:Enforced solid solution type Sn-Zn alloy films were electrochemically synthesized on Cu substrate from an aqueous solution containing citric acid complexes. The electrodeposition behavior of Sn-Zn alloys was classified to a normal co-deposition type, in which electrochemically nobler Sn deposits preferentially compared to Zn. Electrodeposited Sn-Zn alloy films were composed of a non-equilibrium phase, like an enforced solid solution, which was not observed in an equilibrium phase diagram of an Sn-Zn binary alloy system. By applying a thermal annealing process at 150 °C for 10 minutes, a pure Zn phase was precipitated from an electrodeposited Sn-based solid solution phase with excessively dissolved Zn atoms. During the soldering process, intermetallic phases such as Cu3Sn and Cu5Zn8 were formed at the interface between an Sn-Zn alloy and Cu substrate. Tensile strength and fracture elongation of solder-jointed Cu rods with Sn-8 at.%Zn alloy films reached ca. 40 MPa and 12%, respectively.

| S-EPMC7142963 | biostudies-literature

Bottom-Up (Cu, Ag, Au)/Al2O3/Bi2Te3 Assembled Thermoelectric Heterostructures.

Project description:The interface affects the transmission behavior of electrons and phonons, which in turn determines the performance of thermoelectric materials. In this paper, metals (Cu, Ag, Au)/Al2O3/Bi2Te3 heterostructures have been fabricated from bottom to up to optimize the thermoelectric power factor. The introducing metals can be alloyed with Bi2Te3 or form interstitials or dopants to adjust the carrier concentration and mobility. In addition, the metal-semiconductor interface as well as the metal-insulator-semiconductor interface constructed by the introduced metal and Al2O3 would further participate in the regulation of the carrier transport process. By adjusting the metal and oxide layer, it is possible to realize the simultaneous optimization of electric conductivity and Seebeck coefficient. This work will enable the optimal and novel design of heterostructures for thermoelectric materials with further improved performance.

| S-EPMC8145968 | biostudies-literature

Thermoelectric SnS and SnS-SnSe solid solutions prepared by mechanical alloying and spark plasma sintering: Anisotropic thermoelectric properties.

Project description:P-type SnS compound and SnS1-xSex solid solutions were prepared by mechanical alloying followed by spark plasma sintering (SPS) and their thermoelectric properties were then studied in different compositions (x = 0.0, 0.2, 0.5, 0.8) along the directions parallel (//) and perpendicular (⊥) to the SPS-pressurizing direction in the temperature range 323-823 Κ. SnS compound and SnS1-xSex solid solutions exhibited anisotropic thermoelectric performance and showed higher power factor and thermal conductivity along the direction ⊥ than the // one. The thermal conductivity decreased with increasing contents of Se and fell to 0.36 W m-1 K-1 at 823 K for the composition SnS0.5Se0.5. With increasing selenium content (x) the formation of solid solutions substantially improved the electrical conductivity due to the increased carrier concentration. Hence, the optimized power factor and reduced thermal conductivity resulted in a maximum ZT value of 0.64 at 823 K for SnS0.2Se0.8 along the parallel direction.

| S-EPMC5327431 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data