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Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films.

ABSTRACT: While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain unknown. Here, we report the thermal conductivities of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ thin films with controlled annealing and temperature conditions and demonstrate the impact of silver content on thermal transport. After annealing at 160 °C, the room-temperature thermal conductivity of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ thin films increases from 0.24 to 1.59 Wm^-1 K^-1 and from 0.17 to 0.56 Wm^-1 K^-1, respectively. Using phonon transport models and X-ray diffraction measurements, we attribute the thermal conductivity increases to the crystal growth and explain the thermal conductivity variations with the degree of crystallization. Unlike electrical properties reported in previous studies, the presence of silver contents has little impact on the thermal conductivity of Ag_3.9Sb_33.6Te_62.5 and leads to a strong reduction in the thermal conductivity of AgSbTe₂ thin films. By performing transient thermal conductivity measurements at 94 °C, we find the crystallization activation energy of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ films as 1.14 eV and 1.16 eV, respectively. Their differences reveal the role of silver in inhibiting the nucleation and growth of Sb₂Te₃ crystals and impeding thermal transport. These findings provide guidance for optimizing doping and annealing conditions of antimony tellurides for near-room-temperature thermoelectric applications.

SUBMITTER: Ferrer-Argemi L

PROVIDER: S-EPMC6592942 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:Thermal conductivity measurements using Scanning Thermal Microscopy (SThM) usually involve heat transfer across the mechanical contact and liquid meniscus between the thermal probe and the sample. However, variations in contact conditions due to capillary effects at probe-sample contact and probe and sample wear due to mechanical contact interfere with accurate determination of the thermal conductivity. This paper presents measurements of thin film thermal conductivity using a SThM method employing a Wollaston probe in non-contact mode in synergy with detailed heat transfer analysis. In this technique, the thermal probe is scanned above the sample at a distance comparable with the mean free path of the ambient gas molecules. A Three-Dimensional Finite Element Model (3DFEM) that includes the specifics of the heat transfer between the sample and the probe in transition heat conduction regime was developed to predict the SThM probe thermal resistance and fit the thermal conductivity of the measured thin films. Proof-of-concept experimental in-plane thermal conductivity results for 240 nm and 46.6 nm Au films deposited on glass and silicon substrates were validated by experimental measurements of their electrical conductivity coupled with the Wiedemann-Franz law, with a discrepancy < 6.4%. Moreover, predictions based on a kinetic theory model for thin-film thermal conductivity agreed with the experimental results for the Au films with <6.6% discrepancy. To reduce the time and complexity of data analysis and facilitate experimental planning, an analytical model was also developed for the thermal transport between the Wollaston probe, ambient, and film-on-substrate samples. The accuracy of thin film thermal conductivity measurements using the analytical model was investigated using 3DFEM simulations. Fitted functions were developed for fast data analysis of thermal conductivity of thin films in the range of ∼100-600 W m-1 K-1 and thickness between ∼50-300 nm deposited on the two types of substrates investigated in this work, which yielded results with a discrepancy of 6-16.7% when compared to the Au films' thermal conductivity values.

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Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films.

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