Perpendicularly oriented sub-10-nm block copolymer lamellae by atmospheric thermal annealing for one minute.

ABSTRACT: The directed self-assembly (DSA) of block co-polymers (BCPs) can realize next-generation lithography for semiconductors and a variety of soft materials. It is imperative to simultaneously achieve many requirements such as a high resolution, orientation control of micro-domains, etch selectivity, rapid and mild annealing, a low cost, and compatibility with manufacturing for developing suitable BCPs. Here, we describe a new design for modified polysiloxane-based BCPs targeted for sub-10-nm-wide lines, which are able to form perpendicularly oriented lamellar structures in thin films. The hydroxyl groups in the side chains introduced in the polysiloxane block provide a good balance with the polystyrene surface free energy, thereby leading to the perpendicular orientation. Moreover, this orientation can be completed in only one minute at 130?°C in an air atmosphere. Oxygen plasma etching for the thin films results in the achievement of a line width of 8.5?nm.

SUBMITTER: Seshimo T 

PROVIDER: S-EPMC4726028 | biostudies-literature | 2016 Jan

REPOSITORIES: biostudies-literature