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Easily doped p-type, low hole effective mass, transparent oxides.

ABSTRACT: Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X?=?La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications - i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.

SUBMITTER: Sarmadian N

PROVIDER: S-EPMC4745066 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature

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Easily doped p-type, low hole effective mass, transparent oxides.

Sarmadian Nasrin N Saniz Rolando R Partoens Bart B Lamoen Dirk D

Scientific reports 20160208

Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applic ...[more]

PMID: 26854336

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