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Sol-Gel-Deposited Ti-Doped ZnO: Toward Cell Fouling Transparent Conductive Oxides.


ABSTRACT: Ti-doped ZnO thin films were obtained with the aim of tailoring ZnO film bioadhesiveness and making the optoelectronic properties of ZnO materials transferable to biological environments. The films were prepared on silicon substrates by sol-gel spin-coating and subsequent annealing. A Ti-O segregation limits the ZnO crystallite growth and creates a buffer out-layer. Consequently, the Ti-doped ZnO presents slightly increased resistivity, which remains in the order of 10-3 ?·cm. The strong biochemical interference of Zn2+ ions released from pure ZnO surfaces was evidenced by culturing Staphylococcus epidermidis with and without the Zn2+ coupling agent clioquinol. The Ti-doped ZnO surfaces showed a considerable increase of bacterial viability with respect to pure ZnO. Cell adhesion was assayed with human mesenchymal stem cells (hMSCs). Although hMSCs find difficulties to adhere to the pure ZnO surface, they progressively expand on the surface of ZnO when the Ti doping is increased. A preliminary microdevice has been built on the Si substrate with a ZnO film doped with 5% Ti. A one-dimensional micropattern with a zigzag structure shows the preference of hMSCs for adhesion on Ti-doped ZnO with respect to Si. The induced contrast of surface tension further induces a cell polarization effect on hMSCs. It is suggested that the presence of Ti-O covalent bonding on the doped surfaces provides a much more stable ground for bioadhesion. Such fouling behavior suggests an influence of Ti doping on film bioadhesiveness and sets the starting point for the selection of optimal materials for implantable optoelectronic devices.

SUBMITTER: Ramadan R 

PROVIDER: S-EPMC6682115 | biostudies-literature | 2019 Jul

REPOSITORIES: biostudies-literature

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Ti-doped ZnO thin films were obtained with the aim of tailoring ZnO film bioadhesiveness and making the optoelectronic properties of ZnO materials transferable to biological environments. The films were prepared on silicon substrates by sol-gel spin-coating and subsequent annealing. A Ti-O segregation limits the ZnO crystallite growth and creates a buffer out-layer. Consequently, the Ti-doped ZnO presents slightly increased resistivity, which remains in the order of 10<sup>-3</sup> Ω·cm. The str  ...[more]

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