Ontology highlight
ABSTRACT:
SUBMITTER: Jin Hu W
PROVIDER: S-EPMC4773477 | biostudies-literature | 2016 Feb
REPOSITORIES: biostudies-literature
Nature communications 20160229
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10(5). Furthermore, the FTJ memory states could be modulated by light illumination, whi ...[more]