Ontology highlight
ABSTRACT:
SUBMITTER: Li J
PROVIDER: S-EPMC6584484 | biostudies-literature | 2019 Jun
REPOSITORIES: biostudies-literature
Li Jiankun J Li Ning N Ge Chen C Huang Heyi H Sun Yuanwei Y Gao Peng P He Meng M Wang Can C Yang Guozhen G Jin Kuijuan K
iScience 20190603
Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancie ...[more]