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Giant Electroresistance in Ferroionic Tunnel Junctions.

ABSTRACT: Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1×10⁷ at room temperature and 2.1×10⁹ at 10 K is achieved, using an ultrathin BaTiO_3-? layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO₃ substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.

SUBMITTER: Li J

PROVIDER: S-EPMC6584484 | biostudies-literature | 2019 Jun

REPOSITORIES: biostudies-literature

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Giant Electroresistance in Ferroionic Tunnel Junctions.

Li Jiankun J Li Ning N Ge Chen C Huang Heyi H Sun Yuanwei Y Gao Peng P He Meng M Wang Can C Yang Guozhen G Jin Kuijuan K

iScience 20190603

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancie ...[more]

PMID: 31220760

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