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High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100?°C.

ABSTRACT: We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100?°C at pressures in the range from 0.5 to 4?MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300?°C to 100?°C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2?MPa were superior to those annealed in N2 at 4?MPa, despite the lower pressure. For O2 HPA under 2?MPa at 100?°C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58?cm(2)/V.s and 3.89 to 2.64?V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

SUBMITTER: Kim WG

PROVIDER: S-EPMC4789782 | biostudies-literature |

REPOSITORIES: biostudies-literature

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