Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

ABSTRACT: A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Witho

SUBMITTER: Lee H 

PROVIDER: S-EPMC5057139 | biostudies-literature | 2016 Oct

REPOSITORIES: biostudies-literature