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High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

ABSTRACT: Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.

SUBMITTER: Xiao P

PROVIDER: S-EPMC4846996 | biostudies-literature | 2016 Apr

REPOSITORIES: biostudies-literature

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High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature.

Xiao Peng P Dong Ting T Lan Linfeng L Lin Zhenguo Z Song Wei W Luo Dongxiang D Xu Miao M Peng Junbiao J

Scientific reports 20160427

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier ...[more]

PMID: 27118177

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