Real-time device-scale imaging of conducting filament dynamics in resistive switching materials.

ABSTRACT: ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emissi

SUBMITTER: Lee K 

PROVIDER: S-EPMC4895219 | biostudies-literature | 2016 Jun

REPOSITORIES: biostudies-literature