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Valley-engineered ultra-thin silicon for high-performance junctionless transistors.


ABSTRACT: Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of ~500% in a 2.5 nm thick silicon channel device.

SUBMITTER: Kim SY 

PROVIDER: S-EPMC4937383 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Valley-engineered ultra-thin silicon for high-performance junctionless transistors.

Kim Seung-Yoon SY   Choi Sung-Yool SY   Hwang Wan Sik WS   Cho Byung Jin BJ  

Scientific reports 20160708


Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from t  ...[more]

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