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Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films.


ABSTRACT: Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3-d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.

SUBMITTER: Wang X 

PROVIDER: S-EPMC4959013 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films.

Wang Xianjie X   Hu Chang C   Song Yongli Y   Zhao Xiaofeng X   Zhang Lingli L   Lv Zhe Z   Wang Yang Y   Liu Zhiguo Z   Wang Yi Y   Zhang Yu Y   Sui Yu Y   Song Bo B  

Scientific reports 20160725


Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3-d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction mea  ...[more]

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