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Large area and deep sub-wavelength interference lithography employing odd surface plasmon modes.


ABSTRACT: In this paper, large area and deep sub-wavelength interference patterns are realized experimentally by using odd surface plasmon modes in the metal/insulator/metal structure. Theoretical investigation shows that the odd modes possesses much higher transversal wave vector and great inhibition of tangential electric field components, facilitating surface plasmon interference fringes with high resolution and contrast in the measure of electric field intensity. Interference resist patterns with 45?nm (??/8) half-pitch, 50?nm depth, and area size up to 20?mm?×?20?mm were obtained by using 20?nm Al/50?nm photo resist/50?nm Al films with greatly reduced surface roughness and 180?nm pitch exciting grating fabricated with conventional laser interference lithography. Much deeper resolution down to 19.5?nm is also feasible by decreasing the thickness of PR. Considering that no requirement of expensive EBL or FIB tools are employed, it provides a cost-effective way for large area and nano-scale fabrication.

SUBMITTER: Liu L 

PROVIDER: S-EPMC4964334 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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Large area and deep sub-wavelength interference lithography employing odd surface plasmon modes.

Liu Liqin L   Luo Yunfei Y   Zhao Zeyu Z   Zhang Wei W   Gao Guohan G   Zeng Bo B   Wang Changtao C   Luo Xiangang X  

Scientific reports 20160728


In this paper, large area and deep sub-wavelength interference patterns are realized experimentally by using odd surface plasmon modes in the metal/insulator/metal structure. Theoretical investigation shows that the odd modes possesses much higher transversal wave vector and great inhibition of tangential electric field components, facilitating surface plasmon interference fringes with high resolution and contrast in the measure of electric field intensity. Interference resist patterns with 45 n  ...[more]

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