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Atomically thin quantum light-emitting diodes.

ABSTRACT: Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

SUBMITTER: Palacios-Berraquero C

PROVIDER: S-EPMC5052681 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature

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Atomically thin quantum light-emitting diodes.

Palacios-Berraquero Carmen C Barbone Matteo M Kara Dhiren M DM Chen Xiaolong X Goykhman Ilya I Yoon Duhee D Ott Anna K AK Beitner Jan J Watanabe Kenji K Taniguchi Takashi T Ferrari Andrea C AC Atatüre Mete M

Nature communications 20160926

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the sin ...[more]

PMID: 27667022

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