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A single-source precursor approach to solution processed indium arsenide thin films.

ABSTRACT: This paper reports the synthesis of the novel single-source precursor, [{(MeInAs ^t Bu)₃}₂(Me₂InAs( ^t Bu)H)₂] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10^-3 Ω cm) and carrier mobility (410 cm² V^-1 s^-1) values despite growth on amorphous glass substrates.

SUBMITTER: Marchand P

PROVIDER: S-EPMC5059786 | biostudies-literature | 2016 Jul

REPOSITORIES: biostudies-literature

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A single-source precursor approach to solution processed indium arsenide thin films.

Marchand Peter P Sathasivam Sanjayan S Williamson Benjamin A D BA Pugh David D Bawaked Salem M SM Basahel Sulaiman N SN Obaid Abdullah Y AY Scanlon David O DO Parkin Ivan P IP Carmalt Claire J CJ

Journal of materials chemistry. C 20160623 28

This paper reports the synthesis of the novel single-source precursor, [{(MeInAs t Bu)3}2(Me2InAs( t Bu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some par ...[more]

PMID: 27774150

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