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Permanent ferroelectric retention of BiFeO₃ mesocrystal.

ABSTRACT: Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

SUBMITTER: Hsieh YH

PROVIDER: S-EPMC5095170 | biostudies-literature | 2016 Oct

REPOSITORIES: biostudies-literature

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Permanent ferroelectric retention of BiFeO3 mesocrystal.

Hsieh Ying-Hui YH Xue Fei F Yang Tiannan T Liu Heng-Jui HJ Zhu Yuanmin Y Chen Yi-Chun YC Zhan Qian Q Duan Chun-Gang CG Chen Long-Qing LQ He Qing Q Chu Ying-Hao YH

Nature communications 20161026

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric rete ...[more]

PMID: 27782123

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