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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors.


ABSTRACT: The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip-sample interactions. The method is particularly useful for semiconductor- and metal-semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.

SUBMITTER: Kryvchenkova O 

PROVIDER: S-EPMC5140079 | biostudies-literature | 2016 Sep

REPOSITORIES: biostudies-literature

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Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors.

Kryvchenkova Olga O   Abdullah Isam I   Macdonald John Emyr JE   Elliott Martin M   Anthopoulos Thomas D TD   Lin Yen-Hung YH   Igić Petar P   Kalna Karol K   Cobley Richard J RJ  

ACS applied materials & interfaces 20160915 38


The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically ba  ...[more]

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