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Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors.

ABSTRACT: Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, including the photoresist and the conjugated molecules, adsorbed on the surface of s-SWNTs. As a result, the contact resistance is reduced by 3 times and the carrier mobility rises by up to 70%. Our method is compatible with current silicon semiconductor processing technology, making it a viable effective approach to large-scale application of s-SWNTs in the electronics industry.

SUBMITTER: Lv Z

PROVIDER: S-EPMC9062493 | biostudies-literature | 2019 Apr

REPOSITORIES: biostudies-literature

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Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors.

Lv Zhengxia Z Liu Dan D Yu Xiaoqin X Lv Qianjin Q Gao Bing B Jin Hehua H Qiu Song S Qiu Song S Men Chuanling C Song Qijun Q Li Qingwen Q

RSC advances 20190404 19

Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, in ...[more]

PMID: 35515320

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