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Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment.


ABSTRACT: The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 ?F cm-2 in full accumulation and a mobility-capacitance product of 7 × 10-3 ?F/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.

SUBMITTER: Porrazzo R 

PROVIDER: S-EPMC5286459 | biostudies-literature | 2017 Jan

REPOSITORIES: biostudies-literature

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Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment.

Porrazzo Rossella R   Luzio Alessandro A   Bellani Sebastiano S   Bonacchini Giorgio Ernesto GE   Noh Yong-Young YY   Kim Yun-Hi YH   Lanzani Guglielmo G   Antognazza Maria Rosa MR   Caironi Mario M  

ACS omega 20170103 1


The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm<sup>-2</sup> in fu  ...[more]

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