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Surface engineering to achieve organic ternary memory with a high device yield and improved performance.


ABSTRACT: Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.

SUBMITTER: Hou X 

PROVIDER: S-EPMC5364995 | biostudies-literature |

REPOSITORIES: biostudies-literature

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