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Complementary spin transistor using a quantum well channel.

ABSTRACT: In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

SUBMITTER: Park YH

PROVIDER: S-EPMC5397970 | biostudies-literature | 2017 Apr

REPOSITORIES: biostudies-literature

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Complementary spin transistor using a quantum well channel.

Park Youn Ho YH Choi Jun Woo JW Kim Hyung-Jun HJ Chang Joonyeon J Han Suk Hee SH Choi Heon-Jin HJ Koo Hyun Cheol HC

Scientific reports 20170420

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, th ...[more]

PMID: 28425459

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