Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures.

ABSTRACT: The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ?32?nm lateral precision and <50?nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ?2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ?51?GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13?MHz corresponding to ?1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.

SUBMITTER: Schroder T 

PROVIDER: S-EPMC5458551 | biostudies-literature | 2017 May

REPOSITORIES: biostudies-literature