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Excitation-dependent fluorescence from atomic/molecular layer deposited sodium-uracil thin films.

ABSTRACT: Atomic/molecular layer deposition (ALD/MLD) offers unique possibilities in the fabrication of inorganic-organic thin films with novel functionalities. Especially, incorporating nucleobases in the thin-film structures could open new avenues in the development of bio-electronic and photonic devices. Here we report an intense blue and widely excitation-dependent fluorescence in the visible region for ALD/MLD fabricated sodium-uracil thin films, where the crystalline network is formed from hydrogen-bonded uracil molecules linked via Na atoms. The excitation-dependent fluorescence is caused by the red-edge excitation shift (REES) effect taking place in the red-edge of the absorption spectrum, where the spectral relaxation occurs in continuous manner as demonstrated by the time-resolved measurements.

SUBMITTER: Pale V

PROVIDER: S-EPMC5539323 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature

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Excitation-dependent fluorescence from atomic/molecular layer deposited sodium-uracil thin films.

Pale Ville V Giedraityte Zivile Z Chen Xi X Lopez-Acevedo Olga O Tittonen Ilkka I Karppinen Maarit M

Scientific reports 20170801 1

Atomic/molecular layer deposition (ALD/MLD) offers unique possibilities in the fabrication of inorganic-organic thin films with novel functionalities. Especially, incorporating nucleobases in the thin-film structures could open new avenues in the development of bio-electronic and photonic devices. Here we report an intense blue and widely excitation-dependent fluorescence in the visible region for ALD/MLD fabricated sodium-uracil thin films, where the crystalline network is formed from hydrogen- ...[more]

PMID: 28765548

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Project description:Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over the lifetime of the device or during processing. However, as-deposited ALD Al2O3 is typically amorphous with poor resistance to chemical attack by aggressive solutions employed in electronics manufacturing. Therefore, such films may not be suitable for further processing as solvent treatments could weaken the protective barrier properties of the film or dissolved material could contaminate the solvent baths, which can cause cross-contamination of a production line used to manufacture different products. On the contrary, heat-treated, crystalline ALD Al2O3 has shown resistance to deterioration in solutions, such as standard clean (SC) 1 and 2. In this study, ALD Al2O3 was deposited from four different precursor combinations and subsequently annealed either at 600, 800, or 1000 °C for 1 h. Crystalline Al2O3 was achieved after the 800 and 1000 °C heat treatments. The crystalline films showed apparent stability in SC-1 and HF solutions. However, ellipsometry and electron microscopy showed that a prolonged exposure (60 min) to SC-1 and HF had induced a decrease in the refractive index and nanocracks in the films annealed at 800 °C. The degradation mechanism of the unstable crystalline film and the microstructure of the film, fully stable in SC-1 and with minor reaction with HF, were studied with transmission electron microscopy. Although both crystallized films had the same alumina transition phase, the film annealed at 800 °C in N2, with a less developed microstructure such as embedded amorphous regions and an uneven interfacial reaction layer, deteriorates at the amorphous regions and at the substrate-film interface. On the contrary, the stable film annealed at 1000 °C in N2 had considerably less embedded amorphous regions and a uniform Al-O-Si interfacial layer.

Dataset Information

Excitation-dependent fluorescence from atomic/molecular layer deposited sodium-uracil thin films.

Publications

Excitation-dependent fluorescence from atomic/molecular layer deposited sodium-uracil thin films.

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