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HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition.

ABSTRACT: As a member of the two-dimensional metal dichalcogenide family, HfS₂ has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(IV) and H₂S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron microscopy, and X-ray photoelectron spectroscopy. In the saturated regime, the growth rate depends on the substrate nature and is between 0.4 and 0.6 Å per sALD cycle. This growth rate determined at room temperature is lower than with the gALD process reported at 100 °C recently. At those low deposition temperatures, the films remain in an amorphous state. This success in sALD expands the range of material classes available by the new method, adding transition metal dichalcogenides to the list containing oxides, cubic sulfides, hydrides, and organics so far. It promises to overcome the precursor constraints associated with the traditional gALD method, in particular the volatility requirement.

SUBMITTER: Cao Y

PROVIDER: S-EPMC8477444 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Project description:Atomic-layer-deposited alumina (ALD Al2O3) can be utilized for passivation, structural, and functional purposes in electronics. In all cases, the deposited film is usually expected to maintain chemical stability over the lifetime of the device or during processing. However, as-deposited ALD Al2O3 is typically amorphous with poor resistance to chemical attack by aggressive solutions employed in electronics manufacturing. Therefore, such films may not be suitable for further processing as solvent treatments could weaken the protective barrier properties of the film or dissolved material could contaminate the solvent baths, which can cause cross-contamination of a production line used to manufacture different products. On the contrary, heat-treated, crystalline ALD Al2O3 has shown resistance to deterioration in solutions, such as standard clean (SC) 1 and 2. In this study, ALD Al2O3 was deposited from four different precursor combinations and subsequently annealed either at 600, 800, or 1000 °C for 1 h. Crystalline Al2O3 was achieved after the 800 and 1000 °C heat treatments. The crystalline films showed apparent stability in SC-1 and HF solutions. However, ellipsometry and electron microscopy showed that a prolonged exposure (60 min) to SC-1 and HF had induced a decrease in the refractive index and nanocracks in the films annealed at 800 °C. The degradation mechanism of the unstable crystalline film and the microstructure of the film, fully stable in SC-1 and with minor reaction with HF, were studied with transmission electron microscopy. Although both crystallized films had the same alumina transition phase, the film annealed at 800 °C in N2, with a less developed microstructure such as embedded amorphous regions and an uneven interfacial reaction layer, deteriorates at the amorphous regions and at the substrate-film interface. On the contrary, the stable film annealed at 1000 °C in N2 had considerably less embedded amorphous regions and a uniform Al-O-Si interfacial layer.

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HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition.

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HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition.