Ontology highlight
ABSTRACT:
SUBMITTER: Lee M
PROVIDER: S-EPMC5561118 | biostudies-literature | 2017 Aug
REPOSITORIES: biostudies-literature
Lee Moonsang M Mikulik Dmitry D Yang Mino M Park Sungsoo S
Scientific reports 20170817 1
We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the ...[more]