Effects of H₂ High-pressure Annealing on HfO₂/Al₂O₃/In_0.53Ga_0.47As Capacitors: Chemical Composition and Electrical Characteristics.

ABSTRACT: We studied the impact of H₂ pressure during post-metallization annealing on the chemical composition of a HfO₂/Al₂O₃ gate stack on a HCl wet-cleaned In_0.53Ga_0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H₂ partial pressure of 0.04?bar) and H₂ high-pressure annealing (H₂-HPA at 30?bar) methods. In addition, the effectiveness of H₂-HPA on the passivation of the interface states was compared for both p- and n-type In_0.53Ga_0.47As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H₂ pressure. Moreover, the increase in the H₂ pressure significantly improved the capacitance?voltage characteristics, and its effect was more pronounced on the p-type In_0.53Ga_0.47As substrate. However, the H₂-HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

SUBMITTER: Choi S 

PROVIDER: S-EPMC5575061 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature