Unknown

Dataset Information

0

Growth of Epitaxial ZnSnxGe1-xN2 Alloys by MBE.

ABSTRACT: ZnSnxGe1-xN2 alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to InxGa1-xN. Preparation of ZnSnxGe1-xN2 thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of ZnSnxGe1-xN2 films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is described herein. Epitaxial films exhibited 3D growth on sapphire and 2D single-crystal quality on GaN, exhibiting substantial improvements in epitaxy and crystallinity relative to nanocrystalline sputtered films. Films on sapphire were n-type with electronic mobilities as high as 18?cm2?V-1 s-1, an order of magnitude greater than the 2?cm2?V-1 s-1 average mobility observed in this work for sputtered films. Mobility differences potentially arise from strain or surface effects originating from growth techniques, or from differences in film thicknesses. In general, MBE growth has provided desired improvements in electronic mobility, epitaxy, and crystal quality that provide encouragement for the continued study of ZnSnxGe1-xN2 alloys.

SUBMITTER: Shing AM 

PROVIDER: S-EPMC5607306 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature

Json Xml
altmetric image

Publications

Growth of Epitaxial ZnSn<sub>x</sub>Ge<sub>1-x</sub>N<sub>2</sub> Alloys by MBE.

Shing Amanda M AM   Tolstova Yulia Y   Lewis Nathan S NS   Atwater Harry A HA  

Scientific reports 20170920 1

ZnSn<sub>x</sub>Ge<sub>1-x</sub>N<sub>2</sub> alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to In<sub>x</sub>Ga<sub>1-x</sub>N. Preparation of ZnSn<sub>x</sub>Ge<sub>1-x</sub>N<sub>2</sub> thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of ZnSn<sub>x</sub>Ge<sub>1-x</sub>N<sub>2</sub> films by molecular-beam epitaxy (MBE) on c-plane sapphire and GaN templates is desc  ...[more]

Similar Datasets

Unknown Electronegativity and doping in Si<sub>1-x</sub>Ge<sub>x</sub> alloys.
| S-EPMC7198609 | biostudies-literature
Unknown Composition and temperature dependence of self-diffusion in Si<sub>1-x</sub> Ge <sub>x</sub> alloys.
| S-EPMC5430970 | biostudies-literature
Unknown Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.
| S-EPMC8949867 | biostudies-literature
Unknown The Reduced Nitridogermanates(III) Ca<sub>6</sub> [Ge<sub>2</sub> N<sub>6</sub> ] and Sr<sub>6</sub> [Ge<sub>2</sub> N<sub>6</sub> ] with Ge-Ge Bonds.
| S-EPMC8048604 | biostudies-literature
Unknown Reaction Mechanism and Performance of Innovative 2D Germanane-Silicane Alloys: Si<sub>x</sub>Ge<sub>1-</sub> <sub>x</sub>H Electrodes in Lithium-Ion Batteries.
| S-EPMC11199986 | biostudies-literature
Unknown Inkjet-Printed Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> Solar Cells.
| S-EPMC5115396 | biostudies-literature
Unknown One-Stage Hydrothermal Growth and Characterization of Epitaxial LaMnO<sub>3</sub> Films on SrTiO<sub>3</sub> Substrate.
| S-EPMC9457439 | biostudies-literature
Unknown Highly spin-polarized electronic structure and magnetic properties of Mn<sub>2.25</sub>Co<sub>0.75</sub>Al<sub>1-<i>x</i></sub> Ge <sub><i>x</i></sub> Heusler alloys: first-principles calculations.
| S-EPMC9054682 | biostudies-literature
Unknown Doping Dependent Magnetic Behavior in MBE Grown GaAs<sub>1-x</sub>Sb<sub>x</sub> Nanowires.
| S-EPMC7265495 | biostudies-literature
Unknown Epitaxial Growth of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films on Si with YSZ Buffer Layer.
| S-EPMC9730745 | biostudies-literature