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Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

ABSTRACT: Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other applications. Ideal materials for these applications should feature efficient radiative recombination and absorption transitions, altogether with spectral tunability over a wide range. Group IV semiconductor quantum dots can fulfill these requirements and serve as an alternative to the commonly used direct bandgap materials containing toxic and/or rare elements. Here, we present optical properties of butyl-terminated Si and Ge quantum dots and compare them to those of graphene quantum dots, finding them remarkably similar. We investigate their time-resolved photoluminescence emission as well as the photoluminescence excitation and linear absorption spectra. We contemplate that their emission characteristics indicate a (semi-) resonant activation of the emitting channel; the photoluminescence excitation shows characteristics similar to those of a molecule. The optical density is consistent with band-to-band absorption processes originating from core-related states. Hence, these observations strongly indicate a different microscopic origin for absorption and radiative recombination in the three investigated quantum dot systems.

SUBMITTER: de Weerd C

PROVIDER: S-EPMC5663913 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Lasing from Glassy Ge Quantum Dots in Crystalline Si.

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Project description:The modification of graphene quantum dots (GQDs) may drastically enhance their properties, therefore resulting in various related applications. This paper reported the preparation of novel cetyltrimethylammonium bromide/hydroxylated graphene quantum dots (CTAB/HGQDs) thin film using the spin coating technique. The properties of the thin film were then investigated and studied. The functional groups existing in CTAB/HGQDs thin film were confirmed by the Fourier transform infrared (FTIR) spectroscopy, while the atomic force microscope (AFM) displayed a homogenous surface of the thin film with an increase in surface roughness upon modification. Optical characterizations using UV-Vis absorption spectroscopy revealed a high absorption with an optical band gap of 4.162 eV. Additionally, the photoluminescence (PL) spectra illustrated the maximum emission peak of CTAB/HGQDs thin film at a wavelength of 444 nm. The sensing properties of the as-prepared CTAB/HGQDs thin film were studied using a surface plasmon resonance technique towards the detection of several heavy metal ions (HMIs) (Zn2+, Ni2+, and Fe3+). This technique generated significant results and showed that CTAB/HGQDs thin film has great potential for HMIs detection.

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