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An Al?O? Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

ABSTRACT: We fabricated 70 nm Al?O? gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al?O?/Si substrate is superior to that on a traditional 300 nm SiO?/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al?O?/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS?, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

SUBMITTER: Yang H

PROVIDER: S-EPMC5666451 | biostudies-literature | 2017 Sep

REPOSITORIES: biostudies-literature

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An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

Yang Hang H Qin Shiqiao S Zheng Xiaoming X Wang Guang G Tan Yuan Y Peng Gang G Zhang Xueao X

Nanomaterials (Basel, Switzerland) 20170922 10

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a hi ...[more]

PMID: 28937619

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