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Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.

ABSTRACT: The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60?nm to ~600?nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60?nm crystal grain size exhibited >0.1?TB/in2 storage capacity, >600 cycles endurance, >104?s data retention time, ~0.7?V set, and ~-0.61?V re-set bias voltage.

SUBMITTER: Heo JH

PROVIDER: S-EPMC5707385 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

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Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.

Heo Jin Hyuck JH Shin Dong Hee DH Moon Sang Hwa SH Lee Min Ho MH Kim Do Hun DH Oh Seol Hee SH Jo William W Im Sang Hyuk SH

Scientific reports 20171129 1

The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endura ...[more]

PMID: 29185484

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