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Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory.


ABSTRACT: The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60?nm to ~600?nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60?nm crystal grain size exhibited >0.1?TB/in2 storage capacity, >600 cycles endurance, >104?s data retention time, ~0.7?V set, and ~-0.61?V re-set bias voltage.

SUBMITTER: Heo JH 

PROVIDER: S-EPMC5707385 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

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