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Resistive Switching of Sub-10 nm TiO? Nanoparticle Self-Assembled Monolayers.

ABSTRACT: Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO? NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching.

SUBMITTER: Schmidt DO

PROVIDER: S-EPMC5707587 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature

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Resistive Switching of Sub-10 nm TiO₂ Nanoparticle Self-Assembled Monolayers.

Schmidt Dirk Oliver DO Raab Nicolas N Noyong Michael M Santhanam Venugopal V Dittmann Regina R Simon Ulrich U

Nanomaterials (Basel, Switzerland) 20171104 11

Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub ...[more]

PMID: 29113050

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