Unknown

Dataset Information

0

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.


ABSTRACT: Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.

SUBMITTER: Kim S 

PROVIDER: S-EPMC5459000 | biostudies-other | 2017 Apr

REPOSITORIES: biostudies-other

Similar Datasets

| S-EPMC4935939 | biostudies-literature
| S-EPMC4143917 | biostudies-literature
| S-EPMC4704057 | biostudies-literature
| S-EPMC6170501 | biostudies-literature
| S-EPMC6367418 | biostudies-literature
| S-EPMC4791678 | biostudies-other
| S-EPMC4493841 | biostudies-literature
| S-EPMC3625919 | biostudies-literature
| S-EPMC5793530 | biostudies-literature
| S-EPMC5811141 | biostudies-literature