Browse
Submit Data
Databases
API
Help

Dataset Information

19 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Demonstration of ultra-high recyclable energy densities in domain-engineered ferroelectric films.

ABSTRACT: Dielectric capacitors have the highest charge/discharge speed among all electrical energy devices, but lag behind in energy density. Here we report dielectric ultracapacitors based on ferroelectric films of Ba(Zr0.2,Ti0.8)O3 which display high-energy densities (up to 166 J cm-3) and efficiencies (up to 96%). Different from a typical ferroelectric whose electric polarization is easily saturated, these Ba(Zr0.2,Ti0.8)O3 films display a much delayed saturation of the electric polarization, which increases continuously from nearly zero at remnant in a multipolar state, to a large value under the maximum electric field, leading to drastically improved recyclable energy densities. This is achieved by the creation of an adaptive nano-domain structure in these perovskite films via phase engineering and strain tuning. The lead-free Ba(Zr0.2,Ti0.8)O3 films also show excellent dielectric and energy storage performance over a broad frequency and temperature range. These findings may enable broader applications of dielectric capacitors in energy storage, conditioning, and conversion.

SUBMITTER: Cheng H

PROVIDER: S-EPMC5722920 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

Project description:Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

| S-EPMC4486935 | biostudies-literature

Microwave a.c. conductivity of domain walls in ferroelectric thin films.

Project description:Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.

| S-EPMC4895023 | biostudies-literature

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

Project description:The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850?nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8??m(-2), which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.

| S-EPMC4594126 | biostudies-literature

Controlled creation and displacement of charged domain walls in ferroelectric thin films.

Project description:Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes. We demonstrate that ferroelectric switching is accompanied - without exception - by the appearance of charged domain walls and that these walls can be displaced and erased reliably. We ascertain from a combination of scanning probe microscopy, transmission electron microscopy and phase field simulations that creation of charged domain walls is a by-product of, and as such is always coupled to, ferroelectric switching. This is due to the (110) orientation of the tetragonal (Pb,Sr)TiO3 thin films and the crucial role played by the limited conduction of the LSMO bottom electrode layer used in this study. This work highlights that charged domain walls, far from being exotic, unstable structures, as might have been assumed previously, can be robust, stable easily-controlled features in ferroelectric thin films.

| S-EPMC4979207 | biostudies-literature

Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films.

Project description:Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

| S-EPMC8288939 | biostudies-literature

Anti-Ferroelectric Ceramics for High Energy Density Capacitors.

Project description:With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE) display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

| S-EPMC5458845 | biostudies-other

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review.

Project description:This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc.) that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.

| S-EPMC5456131 | biostudies-other

Low-energy structural dynamics of ferroelectric domain walls in hexagonal rare-earth manganites.

Project description:Domain walls (DWs) in ferroic materials, across which the order parameter abruptly changes its orientation, can host emergent properties that are absent in the bulk domains. Using a broadband (106 to 1010 Hz) scanning impedance microscope, we show that the electrical response of the interlocked antiphase boundaries and ferroelectric DWs in hexagonal rare-earth manganites (h-RMnO3) is dominated by the bound-charge oscillation rather than free-carrier conduction at the DWs. As a measure of the rate of energy dissipation, the effective conductivity of DWs on the (001) surfaces of h-RMnO3 at gigahertz frequencies is drastically higher than that at dc, whereas the effect is absent on surfaces with in-plane polarized domains. First-principles and model calculations indicate that the frequency range and selection rules are consistent with the periodic sliding of the DW around its equilibrium position. This acoustic wave-like mode, which is associated with the synchronized oscillation of local polarization and apical oxygen atoms, is localized perpendicular to the DW but free to propagate along the DW plane. Our results break the ground to understand structural DW dynamics and exploit new interfacial phenomena for novel devices.

| S-EPMC5425234 | biostudies-literature

Ultra-high critical current densities of superconducting YBa2Cu3O7-δ thin films in the overdoped state.

Project description:The functional properties of cuprates are strongly determined by the doping state and carrier density. We present an oxygen doping study of YBa2Cu3O7-δ (YBCO) thin films from underdoped to overdoped state, correlating the measured charge carrier density, [Formula: see text], the hole doping, p, and the critical current density, [Formula: see text]. Our results show experimental demonstration of strong increase of [Formula: see text] with [Formula: see text], up to Quantum Critical Point (QCP), due to an increase of the superconducting condensation energy. The ultra-high [Formula: see text] achieved, 90 MA cm-2 at 5 K corresponds to about a fifth of the depairing current, i.e. a value among the highest ever reported in YBCO films. The overdoped regime is confirmed by a sudden increase of [Formula: see text], associated to the reconstruction of the Fermi-surface at the QCP. Overdoping YBCO opens a promising route to extend the current carrying capabilities of rare-earth barium copper oxide (REBCO) coated conductors for applications.

| S-EPMC8047038 | biostudies-literature

Solution-processed transparent ferroelectric nylon thin films.

Project description:Ferroelectricity, a bistable ordering of electrical dipoles in a material, is widely used in sensors, actuators, nonlinear optics, and data storage. Traditional ferroelectrics are ceramic based. Ferroelectric polymers are inexpensive lead-free materials that offer unique features such as the freedom of design enabled by chemistry, the facile solution-based low-temperature processing, and mechanical flexibility. Among engineering polymers, odd nylons are ferroelectric. Since the discovery of ferroelectricity in polymers, nearly half a century ago, a solution-processed ferroelectric nylon thin film has not been demonstrated because of the strong tendency of nylon chains to form hydrogen bonds. We show the solution processing of transparent ferroelectric thin film capacitors of odd nylons. The demonstration of ferroelectricity, as well as the way to obtain thin films, makes odd nylons attractive for applications in flexible devices, soft robotics, biomedical devices, and electronic textiles.

| S-EPMC6697430 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data