Unknown

Dataset Information

0

Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.


ABSTRACT: Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.

SUBMITTER: Wei T 

PROVIDER: S-EPMC5722937 | biostudies-literature |

REPOSITORIES: biostudies-literature

Similar Datasets

| S-EPMC5462787 | biostudies-literature
| S-EPMC6307172 | biostudies-literature
| S-EPMC4660349 | biostudies-literature
| S-EPMC3384075 | biostudies-literature
| S-EPMC5539772 | biostudies-literature
| S-EPMC5255564 | biostudies-other
| S-EPMC4245716 | biostudies-literature
| S-EPMC6226496 | biostudies-literature
| S-EPMC4835732 | biostudies-literature
| S-EPMC6972709 | biostudies-literature