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Graphene-based nonvolatile terahertz switch with asymmetric electrodes.

ABSTRACT: We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metals with different work functions. The resultant asymmetrical energy band structure ensures that both electrical programming and erasing are viable. With the aid of localized surface plasmon resonances in graphene ribbon arrays, the modulation depth is 89% provided that the Femi level of graphene is tuned between 0 and 0.2 eV by proper voltage pulses.

SUBMITTER: Li Y

PROVIDER: S-EPMC5784144 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature

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Graphene-based nonvolatile terahertz switch with asymmetric electrodes.

Li Yan Y Yu Hui H Qiu Xinyu X Dai Tingge T Jiang Jianfei J Wang Gencheng G Zhang Qiang Q Qin Yali Y Yang Jianyi J Jiang Xiaoqing X

Scientific reports 20180124 1

We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metal ...[more]

PMID: 29367596

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