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Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.

ABSTRACT: Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from the blue to the red, were analysed by a combination of electron microscope based imaging techniques. Utilizing the capability of cathodoluminescence hyperspectral imaging it was possible to investigate spatial variations in the luminescence properties on a nanoscale. The high optical quality of a single GaN nanorod was demonstrated, evidenced by a narrow band-edge peak and the absence of any luminescence associated with the yellow defect band. Additionally two spatially confined broad luminescence bands were observed, consisting of multiple peaks ranging from 395?nm to 480?nm and 490?nm to 650?nm. The lower energy band originates from broad c-plane QWs located at the apex of the nanorod and the higher energy band from the semipolar QWs on the pyramidal nanorod tip. Comparing the experimentally observed peak positions with peak positions obtained from plane wave modelling and 3D finite difference time domain(FDTD) modelling shows modulation of the nanorod luminescence by cavity modes. By studying the influence of these modes we demonstrate that this can be exploited as an additional parameter in engineering the emission profile of LEDs.

SUBMITTER: Kusch G

PROVIDER: S-EPMC5789091 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature

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Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.

Kusch Gunnar G Conroy Michele M Li Haoning H Edwards Paul R PR Zhao Chao C Ooi Boon S BS Pugh Jon J Cryan Martin J MJ Parbrook Peter J PJ Martin Robert W RW

Scientific reports 20180129 1

Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from the blue to the red, were analysed by a combination of electron microscope based imaging techniques. Utilizing the capability of cathodoluminescence hyperspectral imaging it was possible to investigate spatial variations in the luminescence properties on a nanoscale. The high optical quality of a single GaN nanorod was demonstrated, evidenced by a narrow band-edge peak and the absence of any lumine ...[more]

PMID: 29379097

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Project description:The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons and holes associated with these processes make the quantum efficiency of a semiconductor nanosystem in an equilibrium state an extensive property. It has long been recognized that tuning of the indium (In) composition in InGaN interlayers gives the potential to obtain a spectrum in the near-infrared to near-ultraviolet spectral range. The thermodynamic intensive properties, including the Debye temperature, carrier temperature, and junction temperature, are the most appropriate metrics to describe the optical-related interactions inherent in a given heterostructure and so can be used as the state variables for understanding the quantum exchange behaviors. The energetic features of the quantum processes are characterized based on analysis of the intensive parameters as determined by means of electroluminescence (EL) and photoluminescence (PL) spectroscopy and current-voltage measurement and then correlated with the designed InGaN/GaN microstructures. According to the McCumber-Sturge theory, the EL and PL Debye temperatures obtained experimentally signal the strength of the electron-phonon and photon-phonon interaction, respectively, while the EL and PL carrier/junction temperatures correspond to the carrier localization. Higher EL Debye temperatures and lower EL carrier/junction temperatures reflect significantly higher luminescence quantum yields, indicative of electron-phonon coupling in the transfer of thermal energy between the confined electrons and the enhancement by excited phonons of heat-assisted emissions. On the other hand, the observation of low luminescence efficiency, corresponding to the lower PL Debye temperatures and higher PL carrier/junction temperatures, is attributed to photon-phonon coupling. These findings are in good accordance to the dependence of the EL and PL quantum efficiency on the In-content of the InGaN/GaN barriers, suggesting that the characteristic Debye and carrier/junction temperatures are intensive parameters useful for assessing the optical properties of a nano-engineered semiconductor heterostructure.

Dataset Information

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.

Publications

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.

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