Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

ABSTRACT: Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550?°C. It was confirmed that the Se layer crystallized and then melted between 250 and 350?°C, completely disappearing at 500?°C. The formation of CuInSe2 and Cu(InGa)Se2 was initiated at around 450?°C and 550?°C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350?°C and Cu(InGa)Se2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6?min.

SUBMITTER: Koo J 

PROVIDER: S-EPMC5834449 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature