Browse
Submit Data
Databases
API
Help

Dataset Information

25 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se₂ absorber based thin film photovoltaic cell.

ABSTRACT: The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage [Formula: see text], short circuit current density [Formula: see text], fill factor [Formula: see text], efficiency [Formula: see text], and collection efficiency [Formula: see text] have been analyzed.

SUBMITTER: Asaduzzaman M

PROVIDER: S-EPMC5328687 | biostudies-literature | 2017 Apr

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell.

Asaduzzaman Md M Bahar Ali Newaz AN Bhuiyan Mohammad Maksudur Rahman MM

Data in brief 20170212

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell ...[more]

PMID: 28275663

Similar Datasets

Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells.

Project description:Thin-film solar cells based on polycrystalline absorbers have reached very high conversion efficiencies of up to 23-25%. In order to elucidate the limiting factors that need to be overcome for even higher efficiency levels, it is essential to investigate microscopic origins of loss mechanisms in these devices. In the present work, a high efficiency (21% without anti-reflection coating) copper indium gallium diselenide (CIGSe) solar cell is characterized by means of a correlative microscopy approach and corroborated by means of photoluminescence spectroscopy. The values obtained by the experimental characterization are used as input parameters for two-dimensional device simulations, for which a real microstructure was used. It can be shown that electrostatic potential and lifetime fluctuations exhibit no substantial impact on the device performance. In contrast, nonradiative recombination at random grain boundaries can be identified as a significant loss mechanism for CIGSe solar cells, even for devices at a very high performance level.

| S-EPMC7442832 | biostudies-literature

Surface/Interface Effects by Alkali Postdeposition Treatments of (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cells.

Project description:Ag alloying and the introduction of alkali elements through a postdeposition treatment are two approaches to improve the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells. In particular, a postdeposition treatment of an alkali metal fluoride of the absorber has shown a beneficial effect on the solar cells performance due to an increase in the open circuit voltage (V OC) for both (Ag,Cu)(In,Ga)Se2 (ACIGS) and CIGS based solar cells. Several reasons have been suggested for the improved V OC in CIGS solar cells including absorber surface and interface effects. Less works investigated how the applied postdeposition treatment influences the ACIGS absorber surface and interface properties and the subsequent buffer layer growth. In this work we employed hard X-ray photoelectron spectroscopy to study the chemical and electronic properties at the real functional interface between a CdS buffer and ACIGS absorbers that have been exposed to different alkali metal fluoride treatments during preparation. All samples show an enhanced Ag content at the CdS/ACIGS interface as compared to ACIGS bulk-like composition, and it is also shown that this enhanced Ag content anticorrelates with Ga content. The results indicate that the absorber composition at the near-surface region changes depending on the applied alkali postdeposition treatment. The Cu and Ga decrease and the Ag increase are stronger for the RbF treatment as compared to the CsF treatment, which correlates with the observed device characteristics. This suggests that a selective alkali postdeposition treatment could change the ACIGS absorber surface composition, which can influence the solar cell behavior.

| S-EPMC8790805 | biostudies-literature

Alkali Dispersion in (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cells-Insight from Theory and Experiment.

Project description:Silver alloying of Cu(In,Ga)Se2 absorbers for thin film photovoltaics offers improvements in open-circuit voltage, especially when combined with optimal alkali-treatments and certain Ga concentrations. The relationship between alkali distribution in the absorber and Ag alloying is investigated here, combining experimental and theoretical studies. Atom probe tomography analysis is implemented to quantify the local composition in grain interiors and at grain boundaries. The Na concentration in the bulk increases up to ∼60 ppm for [Ag]/([Ag] + [Cu]) = 0.2 compared to ∼20 ppm for films without Ag and up to ∼200 ppm for [Ag]/([Ag] + [Cu]) = 1.0. First-principles calculations were employed to evaluate the formation energies of alkali-on-group-I defects (where group-I refers to Ag and Cu) in (Ag,Cu)(In,Ga)Se2 as a function of the Ag and Ga contents. The computational results demonstrate strong agreement with the nanoscale analysis results, revealing a clear trend of increased alkali bulk solubility with the Ag concentration. The present study, therefore, provides a more nuanced understanding of the role of Ag in the enhanced performance of the respective photovoltaic devices.

| S-EPMC7898268 | biostudies-literature

Dataset representing the effect of indirect band gap region of Cd-free AlGaAs buffer layer in Cu(In,Ga)Se photovoltaic cell.

Project description:The dataset of physical properties for the proposed CIGS solar cell with Cd-free AlGaAs buffer layer has been depicted in this data article. The cell performance outcome due to different AlGaAs buffer layer band gap is reported along with optimum solar cell performance parameters for instance, open circuit voltage [Formula: see text], short circuit current density ([Formula: see text], fill factor [Formula: see text], efficiency [Formula: see text], as well as collection efficiency [Formula: see text].

| S-EPMC5582381 | biostudies-literature

Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.

Project description:Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

| S-EPMC5269666 | biostudies-literature

Towards All-Non-Vacuum-Processed Photovoltaic Systems: A Water-Based Screen-Printed Cu(In,Ga)Se2 Photoabsorber with a 6.6% Efficiency.

Project description:During the last few decades, major advances have been made in photovoltaic systems based on Cu(In,Ga)Se2 chalcopyrite. However, the most efficient photovoltaic cells are processed under high-energy-demanding vacuum conditions. To lower the costs and facilitate high-throughput production, printing/coating processes are proving to be effective solutions. This work combined printing, coating, and chemical bath deposition processes of photoabsorber, buffer, and transparent conductive layers for the development of solution-processed photovoltaic systems. Using a sustainable approach, all inks were formulated using water and ethanol as solvents. Screen printing of the photoabsorber on fluorine-doped tin-oxide-coated glass followed by selenization, chemical bath deposition of the cadmium sulfide buffer, and final sputtering of the intrinsic zinc oxide and aluminum-doped zinc oxide top conductive layers delivered a 6.6% maximum efficiency solar cell, a record for screen-printed Cu(In,Ga)Se2 solar cells. On the other hand, the all-non-vacuum-processed device with spray-coated intrinsic zinc-oxide- and tin-doped indium oxide top conductive layers delivered a 2.2% efficiency. The given approaches represent relevant steps towards the fabrication of sustainable and efficient Cu(In,Ga)Se2 solar cells.

| S-EPMC10343602 | biostudies-literature

Voids and compositional inhomogeneities in Cu(In,Ga)Se2 thin films: evolution during growth and impact on solar cell performance.

Project description:Structural defects such as voids and compositional inhomogeneities may affect the performance of Cu(In,Ga)Se2 (CIGS) solar cells. We analyzed the morphology and elemental distributions in co-evaporated CIGS thin films at the different stages of the CIGS growth by energy-dispersive x-ray spectroscopy in a transmission electron microscope. Accumulation of Cu-Se phases was found at crevices and at grain boundaries after the Cu-rich intermediate stage of the CIGS deposition sequence. It was found, that voids are caused by Cu out-diffusion from crevices and GBs during the final deposition stage. The Cu inhomogeneities lead to non-uniform diffusivities of In and Ga, resulting in lateral inhomogeneities of the In and Ga distribution. Two and three-dimensional simulations were used to investigate the impact of the inhomogeneities and voids on the solar cell performance. A significant impact of voids was found, indicating that the unpassivated voids reduce the open-circuit voltage and fill factor due to the introduction of free surfaces with high recombination velocities close to the CIGS/CdS junction. We thus suggest that voids, and possibly inhomogeneities, limit the efficiency of solar cells based on three-stage co-evaporated CIGS thin films. Passivation of the voids' internal surface may reduce their detrimental effects.

| S-EPMC6249540 | biostudies-literature

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

Project description:Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550?°C. It was confirmed that the Se layer crystallized and then melted between 250 and 350?°C, completely disappearing at 500?°C. The formation of CuInSe2 and Cu(InGa)Se2 was initiated at around 450?°C and 550?°C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350?°C and Cu(InGa)Se2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6?min.

| S-EPMC5834449 | biostudies-literature

Aqueous-Solution-Processed Cu2ZnSn(S,Se)4 Thin-Film Solar Cells via an Improved Successive Ion-Layer-Adsorption-Reaction Sequence.

Project description:A facile improved successive ionic-layer adsorption and reaction (SILAR) sequence is described for the fabrication of Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) via the selenization of a precursor film. The precursor films were fabricated using a modified SILAR sequence to overcome compositional inhomogeneity due to different adsorptivities of the cations (Cu+, Sn4+, and Zn2+) in a single cationic bath. Rapid thermal annealing of the precursor films under S and Se vapor atmospheres led to the formation of carbon-free Cu2ZnSnS4 (CZTS) and CZTSSe absorber layers, respectively, with single large-grained layers. The best devices based on CZTS and CZTSSe absorber layers showed total area (∼0.30 cm2) power conversion efficiencies (PCEs) of 1.96 and 3.74%, respectively, which are notably the first-demonstrated efficiencies using a modified SILAR sequence. Detailed diode analyses of these solar cells revealed that a high shunt conductance (G sh), reverse saturation current density (J o), and ideality factor (n d) significantly affected the PCE, open-circuit voltage (V oc), and fill factor (FF), whereas the short-circuit current density (J sc) was dominated by the series resistance (R s) and G sh. However, the diode analyses combined with the compositional and interface microstructural analyses shed light on further improvements to the device efficiency. The facile layer-by-layer growth of the kesterite CZTS-based thin films in aqueous solution provides a great promise as an environmentally benign pathway to fabricate a variety of multielement-component compounds with high compositional homogeneities.

| S-EPMC6645655 | biostudies-literature

Dataset on the generation of red-kinked current-voltage curves in Cu(In,Ga)Se2 solar cells due to buffer/window interfacial defects.

Project description:Red-kinked current-voltage characteristics in silver nanowire transparent electrode based Cu(In,Ga)Se2 solar cells have been reported [1-3]. The author has recently revealed that the buffer/window interfacial defects cause the generation of red-kinked current-voltage characteristics in the solar cells [1]. This article provides the dataset regarding the red-kink for Cu(In,Ga)Se2 solar cells as a function of the donor density in n-type window and CdS buffer/window interfacial defect density. The data were obtained by the simulation for Cu(In,Ga)Se2 solar cells using SCAPS-1D. The data include current density-voltage curves, fill factor, open-circuit voltage, short-circuit current density, and efficiency in the solar cells, and energy band bending in the Cu(In,Ga)Se2 layer.

| S-EPMC6811924 | biostudies-literature