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Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures.


ABSTRACT: The understanding of interactions between electrons and phonons in atomically thin heterostructures is crucial for the engineering of novel two-dimensional devices. Electron-phonon (el-ph) interactions in layered materials can occur involving electrons in the same layer or in different layers. Here we report on the possibility of distinguishing intralayer and interlayer el-ph interactions in samples of twisted bilayer graphene and of probing the intralayer process in graphene/h-BN by using Raman spectroscopy. In the intralayer process, the el-ph scattering occurs in a single graphene layer and the other layer (graphene or h-BN) imposes a periodic potential that backscatters the excited electron, whereas for the interlayer process the el-ph scattering occurs between states in the Dirac cones of adjacent graphene layers. Our methodology of using Raman spectroscopy to probe different types of el-ph interactions can be extended to study any kind of graphene-based heterostructure.

SUBMITTER: Eliel GSN 

PROVIDER: S-EPMC5865138 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature

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Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures.

Eliel G S N GSN   Moutinho M V O MVO   Gadelha A C AC   Righi A A   Campos L C LC   Ribeiro H B HB   Chiu Po-Wen PW   Watanabe K K   Taniguchi T T   Puech P P   Paillet M M   Michel T T   Venezuela P P   Pimenta M A MA  

Nature communications 20180323 1


The understanding of interactions between electrons and phonons in atomically thin heterostructures is crucial for the engineering of novel two-dimensional devices. Electron-phonon (el-ph) interactions in layered materials can occur involving electrons in the same layer or in different layers. Here we report on the possibility of distinguishing intralayer and interlayer el-ph interactions in samples of twisted bilayer graphene and of probing the intralayer process in graphene/h-BN by using Raman  ...[more]

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