High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity.

ABSTRACT: Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility transistors (HEMT) was used to demonstrate a whole new methodology for ion-selective FET sensors, which can create ultra-high sensitivity (-36 mV/log [Pb²⁺]) surpassing the limit of ideal sensitivity (-29.58 mV/log [Pb²⁺]) in a typical Nernst equation for lead ion. The largely improved sensitivity has tremendously reduced the detection limit (10^-10 M) for several orders of magnitude of lead ion concentration compared to typical ion-selective electrode (ISE) (10^-7 M). The high sensitivity was obtained by creating a strong filed between the gate electrode and the HEMT channel. Systematical investigation was done by measuring different design of the sensor and gate bias, in

SUBMITTER: Chen YT 

PROVIDER: S-EPMC5974191 | biostudies-literature | 2018 May

REPOSITORIES: biostudies-literature