Ontology highlight
ABSTRACT:
SUBMITTER: Dong Y
PROVIDER: S-EPMC5982566 | biostudies-literature | 2018 Apr
REPOSITORIES: biostudies-literature
Dong Yan Y Son Dong-Hyeok DH Dai Quan Q Lee Jun-Hyeok JH Won Chul-Ho CH Kim Jeong-Gil JG Chen Dunjun D Lee Jung-Hee JH Lu Hai H Zhang Rong R Zheng Youdou Y
Sensors (Basel, Switzerland) 20180424 5
The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. The present work investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device with an open gate. It was shown that the Al<sub>0.83</sub>In<sub>0.17</sub>N/GaN device demonstrates excellent pH sense functionality in aqueous solutions, exhibiting higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH for AlGaN/GaN) and a fast ...[more]