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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

ABSTRACT: The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

SUBMITTER: Zhang K

PROVIDER: S-EPMC4810372 | biostudies-literature | 2016 Mar

REPOSITORIES: biostudies-literature

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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

Zhang Kexiong K Sumiya Masatomo M Liao Meiyong M Koide Yasuo Y Sang Liwen L

Scientific reports 20160329

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OF ...[more]

PMID: 27021054

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