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Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application.


ABSTRACT: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especially in the near-infrared range (800 to 2000 nm). Meanwhile, the maximum light absorptance increases significantly up to 83%. A Si-PIN photoelectronic detector with microstructured black silicon at the back surface exhibits remarkable device performance, leading to a responsivity of 0.53 A/W at 1060 nm. This novel microstructured black silicon, combining narrow band gap characteristic, could have a potential application in near-infrared photoelectronic detection.

SUBMITTER: Zhong H 

PROVIDER: S-EPMC6179974 | biostudies-literature | 2018 Oct

REPOSITORIES: biostudies-literature

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Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device application.

Zhong Hao H   Ilyas Nasir N   Song Yuhao Y   Li Wei W   Jiang Yadong Y  

Nanoscale research letters 20181010 1


Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its high reflectance and band gap limit. In this study, two-step process, deep reactive ion etching (DRIE) method combined with plasma immersion ion implantation (PIII), are used to fabricate microstructured black silicon on the surface of C-Si. These improved surfaces doped with sulfur elements realize a narrower band gap and an enhancement of light absorptance, especial  ...[more]

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